• EN
  • DA

Danish NationalResearch Database

  • Publications
  • Researchers
Example Finds records
water{} containing the word "water".
water supplies"{}" containing the phrase "water supplies".
author:"Doe, John"author:"{}" containing the phrase "Doe, John" in the author field.
title:IEEEtitle:{} containing the word "IEEE" in the title field.
bech{} containing the word "bech".
marie bech"{}" containing the phrase "marie bech".
orcid:0000-0002-5429-5292orcid:{} Having a particular ORCID
Need more help? Advanced search tutorial
  • Selected (0)
  • History

Multilevel SOT-MRAM Cell with a Novel Sensing Scheme for High-Density Memory Applications

    • Save to Mendeley
    • Export to BibTeX
    • Export to RIS
    • Email citation
Authors:
  • Zeinali, Behzad ;
    Close
    Department of Engineering - Integrated Nanoelectronics, Department of Engineering, Science and Technology, Aarhus University
  • Esmaeili, Mahsa ;
    Close
    Dean's Office, Science and Technology - Secretariat, The Faculty of Science, Dean's Office, Science and Technology, Science and Technology, Aarhus University
  • Madsen, Jens Kargaard ;
    Close
    Department of Engineering - Integrated Nanoelectronics, Department of Engineering, Science and Technology, Aarhus University
  • Moradi, Farshad
    Close
    Department of Engineering - Integrated Nanoelectronics, Department of Engineering, Science and Technology, Aarhus University
DOI:
10.1109/ESSDERC.2017.8066619
Abstract:
This paper presents a multilevel spin-orbit torque magnetic random access memory (SOT-MRAM). The conventional SOT-MRAMs enables a reliable and energy efficient write operation. However, these cells require two access transistors per cell, hence the efficiency of the SOTMRAMs can be questioned in high-density memory application. To deal with this obstacle, we propose a multilevel cell which stores two bits per memory cell. In addition, we propose a novel sensing scheme to read out the stored data in the multilevel SOT-MRAM cell. Our simulation results show that the proposed cell can achieve 3X more energy efficient write operation in comparison with the conventional STTMRAMs. In addition, the proposed cell store two bits without any area penalty in comparison to the conventional one bit SOT MRAM cells.
Type:
Conference paper
Language:
English
Published in:
2017 47th European Solid-state Device Research Conference: Essderc 2017, 2017, p. 172-175
Keywords:
SOT-MRAM; p-MTJ; Spin-Hall Effect; Sensing scheme; Multilevel cell
Main Research Area:
Science/technology
Publication Status:
Published
Review type:
Peer Review
Conference:
European Solid-State Device Research Conference, 2017
Publisher:
IEEE
Submission year:
2017
Scientific Level:
Scientific
ID:
2392119046

Full text access

  • Doi Get publisher edition via DOI resolver
Checking for on-site access...

On-site access

At institution

  • Aarhus university.en

Metrics

Feedback

Sitemap

  • Search
    • Statistics
    • Tutorial
    • Data
    • FAQ
    • Contact
  • About
    • Institutions
    • Release History
    • Cookies and Personal Data
  • Open Access
    • The Danish Open Access Indicator

Copyright © 1998–2018.

Fivu en