- Authors:
- DOI:
- 10.1109/ESSDERC.2017.8066619
- Abstract:
- This paper presents a multilevel spin-orbit torque magnetic random access memory (SOT-MRAM). The conventional SOT-MRAMs enables a reliable and energy efficient write operation. However, these cells require two access transistors per cell, hence the efficiency of the SOTMRAMs can be questioned in high-density memory application. To deal with this obstacle, we propose a multilevel cell which stores two bits per memory cell. In addition, we propose a novel sensing scheme to read out the stored data in the multilevel SOT-MRAM cell. Our simulation results show that the proposed cell can achieve 3X more energy efficient write operation in comparison with the conventional STTMRAMs. In addition, the proposed cell store two bits without any area penalty in comparison to the conventional one bit SOT MRAM cells.
- Type:
- Conference paper
- Language:
- English
- Published in:
- 2017 47th European Solid-state Device Research Conference: Essderc 2017, 2017, p. 172-175
- Keywords:
- SOT-MRAM; p-MTJ; Spin-Hall Effect; Sensing scheme; Multilevel cell
- Main Research Area:
- Science/technology
- Publication Status:
- Published
- Review type:
- Peer Review
- Conference:
- European Solid-State Device Research Conference, 2017
- Publisher:
- IEEE
- Submission year:
- 2017
- Scientific Level:
- Scientific
- ID:
- 2392119046
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