Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have in particular been concerned with the effect of biaxial strain (compressive and tensile) on the diffusion of pure vacancy-assisted diffusers (Sb and, partly, Ge) and pure interstitial-assisted diffusers (B and P). It is found that compressive biaxial strain retards the diffusion of the interstitial-assisted diffusers, whereas tensile biaxial strain enhances the diffusion of these impurities. The opposite is the case for the vacancy-assisted diffusers.
Materials Science and Engineering: B, 2005, Vol 124-125, Issue SI, p. 241-244