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Integrated tunneling sensor for nanoelectromechanical systems

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Authors:
  • Sadewasser, S. ;
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    unknown
  • Abadal, G. ;
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    unknown
  • Barniol, N. ;
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    unknown
  • Dohn, Søren ;
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    Department of Micro- and Nanotechnology, Technical University of Denmark
  • Boisen, Anja
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    Orcid logo0000-0002-9918-6567
    Department of Micro- and Nanotechnology, Technical University of Denmark
DOI:
10.1063/1.2362593
Abstract:
Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1 nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunneling sensors. Based on this analysis, a tunneling sensor is fabricated by Si micromachining technology and its proper operation is demonstrated. (c) 2006 American Institute of Physics.
Type:
Journal article
Language:
English
Published in:
Applied Physics Letters, 2006, Vol 89, Issue 17
Keywords:
ATOMIC-FORCE MICROSCOPY; FABRICATION; MASS DETECTION
Main Research Area:
Science/technology
Publication Status:
Published
Review type:
Peer Review
Submission year:
2006
Scientific Level:
Scientific
ID:
7918752

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