Palsgaard, Mattias Lau Nøhr1; Andersen, Nick Papior1; Brandbyge, Mads3
1 Department of Micro- and Nanotechnology, Technical University of Denmark2 Theoretical Nanoelectronics, Department of Micro- and Nanotechnology, Technical University of Denmark3 Center for Nanostructured Graphene, Center, Technical University of Denmark
We present a first principles method for calculating the inelastic electron tunneling spectroscopy (IETS) on gated graphene. We reproduce experiments on pristine graphene and point out the importance of including several phonon modes to correctly estimate the local doping from IETS. We demonstrate how the IETS of typical imperfections in graphene can yield characteristic fingerprints revealing, e.g., adsorbate species or local buckling. Our results show how care is needed when interpreting scanning tunneling microscopy images of defects due to suppression of the elastic tunneling on graphene.
Physical Review B (condensed Matter and Materials Physics), 2015, Vol 91, Issue 12