1 Administration, Department of Chemistry, Faculty of Science, Københavns Universitet2 RMIT University3 University of Melbourne4 Administration, Department of Chemistry, Faculty of Science, Københavns Universitet5 University of Melbourne
In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers’ relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated.
Nanoscale Research Letters, 2014, Vol 9
Ab initio; Bilayers; Density functional theory; Phosphorus in silicon