1 Department of Micro- and Nanotechnology, Technical University of Denmark2 National University of Singapore3 Agency for Science, Technology and Research4 National University of Singapore
Current-induced domain wall (DW) motion is investigated in a 600nm wide nanowire using multilayer film with a structure of Ta(5nm)/Pd(5nm)/[CoFe(0.4nm)/Pd(1.2nm)]15/Ta(5nm) in terms of anomalous Hall effect measurements. It is found that motion of DWs can be driven by a current density as low as 1. 44×1011Am−2. The effect of the Oersted field (HOe) and spin transfer torque field (HST), which are considered as effective fields for DW motion, is quantitatively separated from the dependence of depinning fields on the current. The results show that the motion of the walls is essentially dominated by the non-adiabaticity with a high non-adiabatic factor β of up to 0.4.