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Practical investigation of the gate bias effect on the reverse recovery behavior of the body diode in power MOSFETs

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Authors:
  • Lindberg-Poulsen, Kristian ;
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    Orcid logo0000-0001-7507-8302
    Department of Electrical Engineering, Technical University of Denmark
  • Petersen, Lars Press ;
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    Orcid logo0000-0001-7559-8789
    Department of Electrical Engineering, Technical University of Denmark
  • Ouyang, Ziwei ;
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    Orcid logo0000-0001-7046-9224
    Department of Electrical Engineering, Technical University of Denmark
  • Andersen, Michael A. E.
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    Orcid logo0000-0002-5612-0541
    Department of Electrical Engineering, Technical University of Denmark
DOI:
10.1109/IPEC.2014.6870084
Abstract:
This work considers an alternative method of reducing the body diode reverse recovery by taking advantage of the MOSFET body effect, and applying a bias voltage to the gate before reverse recovery. A test method is presented, allowing the accurate measurement of voltage and current waveforms during reverse recovery at high di=dt. Different bias voltages and dead times are combined, giving a loss map which makes it possible to evaluate the practical efficacy of gate bias on reducing the MOSFET body diode reverse recovery, while comparing it to the well known methods of dead time optimization. A selection of 60V devices for synchronous rectification are compared for their suitability for gate bias, while a selection of 600V devices are compared for the efficacy of gate bias for the zero voltage transition converter application. The results show that many of the tested devices benefit from greatly reduced reverse recovery after the application of gate bias.
ISBN:
9781479927050
Type:
Conference paper
Language:
English
Published in:
Proceedings of the 2014 International Power Electronics Conference, 2014, p. 2842-2849
Keywords:
Body diode; Body effect; MOSFET; Reverse recovery
Main Research Area:
Science/technology
Publication Status:
Published
Review type:
Peer Review
Conference:
IPEC 2014
Publisher:
IEEE
Submission year:
2014
Scientific Level:
Scientific
ID:
268520066

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