Gaiduk, Peter5; Hansen, John Lundsgaard5; Nylandsted Larsen, Arne5; Bregolin, F. L.4; Skorupa, W.4
1 Department of Physics and Astronomy, Science and Technology, Aarhus University2 Interdisciplinary Nanoscience Center - INANO-Fysik, iNANO-huset, Interdisciplinary Nanoscience Center, Science and Technology, Aarhus University3 Interdisciplinary Nanoscience Center - INANO-Fysik, Ny Munkegade, Interdisciplinary Nanoscience Center, Science and Technology, Aarhus University4 unknown5 Department of Physics and Astronomy, Science and Technology, Aarhus University
By combining transmission electron microscopy and Rutherford backscattering spectrometry, we have identified carbon related suppression of dislocations and tin precipitation in supersaturated molecular-beam epitaxial grown SiSn alloy layers. Secondary ion mass spectrometry has exposed the accumulation of carbon in the SiSn layers after high temperature carbon implantation and high temperature thermal treatment. Strain-enhanced separation of point defects and formation of dopant-defect complexes are suggested to be responsible for the effects. The possibility for carbon assisted segregation-free high temperature growth of heteroepitaxial SiSn/Si and GeSn/Si structures is argued.