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1 Department of Mechanical Engineering, Technical University of Denmark 2 Materials and Surface Engineering, Department of Mechanical Engineering, Technical University of Denmark 3 Petrozavodsk State University 4 KTH - Royal Institute of Technology 5 Petrozavodsk State University
Heteroepitaxial CeO2 (80 nm)/La0.5Sr0.5CoO3 (500 nm) film structure has been pulsed laser deposited on a sapphire substrate. The Ag/CeO2 microjunctions patterned by a focused ion beam on a La0.5Sr0.5CoO3 film exhibit reproducible reversible switching between a high resistance state (OFF) with insulating properties and a semiconducting ormetallic lowresistance state (ON) with resistance ratios up to 104. The influence of micro-scaling and defects formed at the cell boundaries during etching on its electrical characteristics has been analyzed. The appearance of a switching channel at the moment of the electrical forming, responsible for the memory effect, has been proved, along with a mechanism of a self-healing electrical breakdown. © 2014 Elsevier B.V. All rights reserved.
Thin Solid Films, 2014, Vol 556
Oxide heterostructure; Memory resistive switching; Focused ion beam
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