Fabrication and characterization of 64 + 64 2-D row-column addressed CMUT arrays with 250 μm element pitch and 4.4 MHz center frequency in air incorporating a new design approach is presented. The arrays are comprised of two wafer bonded, structured silicon-on-insulator wafers featuring an opengrid support structure on top of the CMUT plates, omitting the need for through wafer vias. A 5 mask process is used to produce 2-D row-column addressed CMUT arrays with 74 nm vacuum gaps, single crystalline silicon plates with optional lithographically defined mass loads, 120 V pull-in voltage, and high voltage insulation up to 310 V.
2013 Ieee International Ultrasonics Symposium Proceedings, 2013, p. 1712-1715
Fields, Waves and Electromagnetics; Bonding; Electrodes; Insulation; Resonant frequency; Silicon-on-insulator; Voltage measurement
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2013 IEEE International Ultrasonics Symposium, 2013