1 Department of Physics, Technical University of Denmark2 Department of Micro- and Nanotechnology, Technical University of Denmark3 Silicon Microtechnology, Department of Micro- and Nanotechnology, Technical University of Denmark4 Experimental Surface and Nanomaterials Physics, Department of Physics, Technical University of Denmark5 DTU Danchip, Technical University of Denmark6 VTT - Technical Research Centre of Finland
While emission and absorption entropy generation is well known in black bodies, it has not previously been studied in semiconductors, even though semiconductors are widely used for solar light absorption in modern solar cells . We present an analysis of the entropy generation in semiconductor materials due to emission and absorption of electromagnetic radiation. It is shown that the emission and absorption entropy generation reduces the fundamental limit on the efficiency of any semiconductor solar cell even further than the Landsberg limit. The results are derived from purely thermodynamical considerations and are thus of general validity. A modified Landsberg efficiency and numerical results are given.
Proceedings of the 28th European Photovoltaic Solar Energy Conference and Exhibition, 2013, p. 20-23
Fundamentals; Modelling; Perfomance
Main Research Area:
28th European Photovoltaic Solar Energy Conference and Exhibition, 2013