1 Condensed Matter Physics, The Niels Bohr Institute, Faculty of Science, Københavns Universitet2 Condensed Matter Physics, The Niels Bohr Institute, Faculty of Science, Københavns Universitet
We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.