Sintamarean, Nicolae Christian1; Blaabjerg, Frede3; Wang, Huai1
1 Department of Energy Technology, The Faculty of Engineering and Science, Aalborg University, VBN2 The Faculty of Engineering and Science, Aalborg University, VBN3 Power Electronic Systems, The Faculty of Engineering and Science, Aalborg University, VBN
This paper propose a novel Electro-Thermal Model for the new generation of power electronics WBG-devices (by considering the SiC MOSFET-CMF20120D from CREE), which is able to estimate the device junction and case temperature. The Device-Model estimates the voltage drop and the switching energies by considering the device current, the off-state blocking voltage and junction temperature variation. Moreover, the proposed Thermal-Model is able to consider the thermal coupling within the MOSFET and its freewheeling diode, integrated into the same package, and the influence of the ambient temperature variation. The importance of temperature loop feedback in the estimation accuracy of device junction and case temperature is studied. Furthermore, the Safe Operating Area (SOA) of the SiC MOSFET is determined for 2L-VSI applications which are using sinusoidal PWM. Thus, by considering the heatsink thermal impedance, the switching frequency and the ambient temperature, the maximum allowed drain current is determined according to the thermal limitations of the device. Finally, dynamic study of MOSFET junction and case temperature is also performed by considering the variation of the ambient temperature and of the load current.
9781479901142, 9781479901166, 9781479901159
Proceedings of the 15th European Conference on Power Electronics and Applications, Epe 2013, 2013, p. 1-10
Electro-Thermal Model; Thermal coupling; Junction-Case temperature estimation; Thermal Cycling; Safe Operation Area
Main Research Area:
European Conference on Power Electronics and Applications (EPE), 2013