Pittini, Riccardo1; Zhang, Zhe1; Andersen, Michael A. E.1
1 Department of Electrical Engineering, Technical University of Denmark2 Electronics, Department of Electrical Engineering, Technical University of Denmark
Silicon Carbide (SiC) power devices can provide a significant improvement of power density and efficiency in power converters. The switching performances of SiC power devices are often a trade-off between the gate driver complexity and the desired performance; this is especially true for SiC BJTs and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations on the gate driver complexity and cost.
Proceedings of Ecce Asia Downunder 2013, 2013, p. 233-239
Silicon Carbide (SiC); SiC JFET; SiC MOSFET; Gate Driver; Switching losses