1 Institute of Chemical Engineering, Biotechnology and Environmental Technology, Faculty of Engineering, SDU2 Department of Physics, Chemistry and Pharmacy, Faculty of Science, SDU3 Department of Physics, Chemistry and Pharmacy, Faculty of Science, SDU
Wehave studied the growth and properties of SiC films on Siwafers, under ultrahigh vacuumbackground con- ditions, using a remote-, microwave excited,methane plasma as a source of active carbon and hydrogen,while the Si substrates were held at a temperature of near 700 °C. The reaction is diffusional and should thus be self-limiting, but it actually reaches up to 20–25 nm thickness due to direct transport of Si from the substrate to the top surface through initially open defects in the growing film. These defects gradually fill up during the growth, and the resulting films have a relatively lowdensity of these, and are otherwise very uniform and poly- crystalline. They are characterized with scanning electron microscopy, atomic force microscopy, X-ray photo- electron spectroscopy, X-ray diffraction, and hardnessmeasurements.