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1 Department of Micro- and Nanotechnology, Technical University of Denmark 2 Nanointegration, Department of Micro- and Nanotechnology, Technical University of Denmark 3 Department of Physics, Technical University of Denmark 4 Experimental Surface and Nanomaterials Physics, Department of Physics, Technical University of Denmark 5 Silicon Microtechnology, Department of Micro- and Nanotechnology, Technical University of Denmark 6 University of Florida 7 Technical University of Denmark 8 Sandia National Laboratories 9 Applied Materials
The residual implanted dose of ultra-shallow B+ implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23% due to ion backscattering for 2 keV implants in Ge. The electrical characterization of ultra-shallow B+ implants at 2 keV to a dose of 5.0×1014 cm-2 at beam currents ranging from 0.4 to 6.4 mA has been studied using micro Hall effect measurements after annealing at 400°C for 60 s. It has been shown that the sheet number increases with beam current across the investigated range with electrical activation being 76% higher at 6.4 mA as compared to 0.4mA. However, at 6.4 mA, the electrically active fraction remained low at 11.4%. Structural characterization revealed that the implanted region remained crystalline and amorphization is not able to explain the increased activation. The results suggest the presence of a stable B:Ge cluster whose formation is altered by point defect recombination during high flux implantation which results in increased B activation. © The Electrochemical Society.
Ecs Transactions, 2012, p. 543-549
Point defects; Silicon alloys; Germanium
Main Research Area:
220th ECS Meeting and Electrochemical Energy Summit, 2012
Electrochemical Society, Incorporated