1 Center for Electron Nanoscopy, Technical University of Denmark2 Hungarian Academy of Sciences3 University of Crete4 Hungarian Academy of Sciences5 University of Crete
Hexagonal GaN films with the  direction parallel to the surface normal were grown on (111) oriented single crystalline diamond substrates by plasma-assisted molecular beam epitaxy. Pre-treatments of the diamond surface with the nitrogen plasma beam, prior the nucleation of a thin AlN layer, eliminated the inversion domains and reduced the density of threading dislocations in the GaN epilayers. The films have an in-plane epitaxial relationship GaN//diamond. Thus GaN (0001) thin films of single epitaxial relationship and of single polarity were realised on diamond with AlN buffer.
Diamond and Related Materials, 2013, Vol 34, p. 9-12