Dynamic Characterization and Impulse Response Modeling of Amplitude and Phase Response of Silicon Nanowires
- Authors:
- DOI:
- 10.1109/JPHOT.2013.2246560
- Abstract:
- Amplitude and phase dynamics of silicon nanowires were measured using time-resolved spectroscopy. Time shifts of the maximum phase change and minimum amplitude as a function of pump power due to saturation of the free-carrier density were observed. A phenomenological impulse response model used to fit the experimental data indicated that the free-carrier lifetime was between $7.5 \leq \tau_{\rm fc} \leq 16.2\ \hbox{ns}$, and the two-photon absorption coefficient and the Kerr coefficient were $3 \times 10^{-12}\ \hbox{m.W}^{-1}$ and $4 \times 10^{-18}\ \hbox{m}^{2}.\hbox{W}^{-1}$, respectively, for silicon nanowires with lengths varying from 3.6 to 14.9 mm.
- Type:
- Journal article
- Language:
- English
- Published in:
- I E E E Photonics Journal, 2013, Vol 5, Issue 2
- Keywords:
- Silicon nanowire; Pump–probe spectroscopy; Two-photon absorption (TPA); Free-carrier absorption (FCA)
- Main Research Area:
- Science/technology
- Publication Status:
- Published
- Review type:
- Peer Review
- Submission year:
- 2014
- Scientific Level:
- Scientific
- ID:
- 239065939
0000-0002-3514-8510
