1 Department of Photonics Engineering, Technical University of Denmark2 Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark3 Freidrich-Alexander-University of Erlangen-Nürnberg4 Linköping University
The preparation and application of co-doped polycrystalline SiC as source in sublimation growth of fluorescent layers is a complex topic. Photoluminescence topographies of luminescent 6H-SiC layers and their corresponding source crystals have been studied in order to investigate the dependence of the epitaxial growth on the source material. It is shown that the homogeneity concerning the dopant incorporation and the layer luminescence intensity does not depend on the characteristics of the PVT grown source material. Therefore co-doped polycrystalline SiC is a promising source material in fast sublimation growth of luminescent 6H-SiC.
Materials Science Forum, 2013, p. 421-424
Main Research Area:
Materials Science Forum
European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)