1 Department of Photonics Engineering, Technical University of Denmark2 Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark3 Linköping University4 Freidrich-Alexander-University of Erlangen-Nürnberg5 KTH - Royal Institute of Technology
Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.
Materials Science Forum, 2013, p. 185-188
Main Research Area:
Materials Science Forum
European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)