Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This concept opens possibilities to explore green light emitting diodes using a new materials platform.
Materials Science Forum, 2013, p. 185-188
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Materials Science Forum
European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)