- Authors:
- DOI:
- 10.4028/www.scientific.net/MSF.740-742.39
- Abstract:
- Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
- ISBN:
- 9783037856246
- Type:
- Conference paper
- Language:
- English
- Published in:
- Journal of Metastable and Nanocrystalline Materials, 2013, p. 39-42
- Main Research Area:
- Science/technology
- Publication Status:
- Published
- Series:
- Materials Science Forum
- Review type:
- Peer Review
- Conference:
- European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
- Submission year:
- 2013
- Scientific Level:
- Scientific
- ID:
- 236699716