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Polycrystalline SiC as source material for the growth of fluorescent SiC layers

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Authors:
  • Kaiser, M. ;
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    University of Erlangen-Nuremberg
  • Hupfer, T. ;
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    University of Erlangen-Nuremberg
  • Jokubavicus, V. ;
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    Linköping University
  • Schimmel, S. ;
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    University of Erlangen-Nuremberg
  • Syväjärvi, M. ;
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    Linköping University
  • Ou, Yiyu ;
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    Orcid logo0000-0002-2127-9827
    Department of Photonics Engineering, Technical University of Denmark
  • Ou, Haiyan ;
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    Orcid logo0000-0002-0538-8230
    Department of Photonics Engineering, Technical University of Denmark
  • Linnarsson, M. K. ;
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    KTH - Royal Institute of Technology
  • Wellmann, P.
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    University of Erlangen-Nuremberg
DOI:
10.4028/www.scientific.net/MSF.740-742.39
Abstract:
Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
ISBN:
9783037856246
Type:
Conference paper
Language:
English
Published in:
Journal of Metastable and Nanocrystalline Materials, 2013, p. 39-42
Main Research Area:
Science/technology
Publication Status:
Published
Series:
Materials Science Forum
Review type:
Peer Review
Conference:
European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)
Submission year:
2013
Scientific Level:
Scientific
ID:
236699716

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