Polycrystalline SiC as source material for the growth of fluorescent SiC layers

M. Kaiser; T. Hupfer; V. Jokubavicus; S. Schimmel; M. Syväjärvi; Yiyu Ou; Haiyan Ou; M. K. Linnarsson; P. Wellmann

doi:10.4028/www.scientific.net/MSF.740-742.39

Polycrystalline SiC as source material for the growth of fluorescent SiC layers

Authors:

Kaiser, M. ;
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University of Erlangen-Nuremberg
Hupfer, T. ;
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University of Erlangen-Nuremberg
Jokubavicus, V. ;
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Linköping University
Schimmel, S. ;
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University of Erlangen-Nuremberg
Syväjärvi, M. ;
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Linköping University
Ou, Yiyu ;
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0000-0002-2127-9827
Department of Photonics Engineering, Technical University of Denmark
Ou, Haiyan ;
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0000-0002-0538-8230
Department of Photonics Engineering, Technical University of Denmark
Linnarsson, M. K. ;
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KTH - Royal Institute of Technology
Wellmann, P.
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University of Erlangen-Nuremberg

DOI:

10.4028/www.scientific.net/MSF.740-742.39

Abstract:

Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.

ISBN:

9783037856246

Type:

Conference paper

Language:

English

Published in:

Silicon Carbide and Related Materials (ecscrm), European Conference on, 2013, p. 39-42

Main Research Area:

Science/technology

Publication Status:

Published

Series:

Materials Science Forum

Review type:

Peer Review

Conference:

European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)

Submission year:

2013

Scientific Level:

Scientific

ID:

236699716

Polycrystalline SiC as source material for the growth of fluorescent SiC layers

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