1 Department of Photonics Engineering, Technical University of Denmark2 Diode Lasers and LED Systems, Department of Photonics Engineering, Technical University of Denmark3 Freidrich-Alexander-University of Erlangen-Nürnberg4 Linköping University5 KTH - Royal Institute of Technology
Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport method. The grain influence on the growth rate of fluorescent SiC layers grown by a sublimation epitaxial process is discussed in respect of surface kinetics.
Materials Science Forum, 2013, p. 39-42
Main Research Area:
Materials Science Forum
European Conference on Silicon Carbide and Related Materials (ECSCRM 2012)