This paper presents a bondwire array model obtained using a software based on the finite elements method and validated up to 15 GHz by measurements over a purpose-build array structure. This work addresses the limits of the inductor-based bondwire model when used at frequencies above C-band to simulate the large bondwire arrays that are used in long multi-transistor power bars. The usefulness of an accurate 3D EM model during the amplifier's matching network design process is highlighted using a practical example, and the effect of the insertion loss variations along the different bondwires comprising the array on the hybrid performance is discussed.
Proceedings of 2012 Asia-pacific Microwave Conference (apmc), 2012, p. 851-853
High power amplifier; Hybrid integrated circuits; Integrated circuit packaging; Power transistors; Semiconductor device packaging; Wafer bonding