1 Optoelectronics, Department of Photonics Engineering, Technical University of Denmark2 Department of Photonics Engineering, Technical University of Denmark3 Department of Physics, Technical University of Denmark4 Department of Micro- and Nanotechnology, Technical University of Denmark5 University of Copenhagen6 unknown7 Chinese Academy of Sciences
We report the effect of annealing on self-assembled InGaAs/GaAs quantum dots, as investigated by means of resonant photoluminescence (PL), resonant Raman scattering, polarization dependent PL, and high resolution X-ray diffraction.
International Conference on Molecular Beam Epitaxy, 2002, 2002, p. 373-374
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12th International Conference on Molecular Beam Epitaxy (MBE-XII), 2002