Lin, Rong5; Petersen, Dirch Hjorth1; Wang, Fei3; Yates, Bradley R.6; Jones, Kevin S.6; Hansen, Ole4; Kontos, Alex7; Nielsen, Peter Folmer1
1 Department of Micro- and Nanotechnology, Technical University of Denmark2 Nanointegration, Department of Micro- and Nanotechnology, Technical University of Denmark3 Silicon Microtechnology, Department of Micro- and Nanotechnology, Technical University of Denmark4 Experimental Surface and Nanomaterials Physics, Department of Physics, Technical University of Denmark5 Technical University of Denmark6 University of Florida7 Applied Materials
We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations.
A I P Conference Proceedings Series, 2012, Vol 1496, p. 175-178
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International Conference on Ion Implantation Technology, 2012