Lin, Rong5; Petersen, Dirch Hjorth1; Wang, Fei3; Yates, Bradley R.8; Jones, Kevin S.8; Hansen, Ole4; Kontos, Alex7; Nielsen, Peter Folmer1
1 Department of Micro- and Nanotechnology, Technical University of Denmark2 Nanointegration, Department of Micro- and Nanotechnology, Technical University of Denmark3 Silicon Microtechnology, Department of Micro- and Nanotechnology, Technical University of Denmark4 Experimental Surface and Nanomaterials Physics, Department of Physics, Technical University of Denmark5 Technical University of Denmark6 University of Florida7 Applied Materials8 University of Florida
We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations.
A I P Conference Proceedings Series, 2012, Vol 1496, p. 175-178
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International Conference on Ion Implantation Technology, 2012