1 Department of Micro- and Nanotechnology, Technical University of Denmark2 Magnetic Systems, Department of Micro- and Nanotechnology, Technical University of Denmark3 Department of Informatics and Mathematical Modeling, Technical University of Denmark4 Image Analysis and Computer Graphics, Department of Informatics and Mathematical Modeling, Technical University of Denmark5 unknown6 Department of Applied Mathematics and Computer Science, Technical University of Denmark
We investigate the changes of planar Hall effect bridge magnetic field sensors upon exposure to temperatures between 25° C and 90°C. From analyses of the sensor response vs. magnetic fields we extract the exchange bias field Hex, the uniaxial anisotropy field HK and the anisotropic magnetoresistance (AMR) of the exchange biased thin film at a given temperature and by comparing measurements carried out at elevated temperatures T with measurements carried out at 25° C after exposure to T, we can separate the reversible from the irreversible changes of the sensor. The results are not only relevant for sensor applications but also demonstrate the method as a useful tool for characterizing exchange-biased thin films.
Technical Proceedings of the 2012 Nsti Nanotechnology Conference and Expo, 2012, p. 215-218
Anisotropy; Biosensors; Electric resistance; Exhibitions; Fabrication; Fluidics; Hall effect; Magnetic sensors; Magnetometers; Magnetoresistance; Thin films; Nanotechnology