Borup, Kasper Andersen5; Christensen, Mogens5; Blichfeld, Anders Bank6; Johnsen, Simon5; Toberer, Eric3; Snyder, G. Jeffrey4
1 Department of Chemistry, Science and Technology, Aarhus University2 Interdisciplinary Nanoscience Center - INANO-Kemi, Langelandsgade, Interdisciplinary Nanoscience Center, Science and Technology, Aarhus University3 Colorado School of Mines4 Caltech5 Department of Chemistry, Science and Technology, Aarhus University6 Interdisciplinary Nanoscience Center - INANO-Kemi, Langelandsgade, Interdisciplinary Nanoscience Center, Science and Technology, Aarhus University
We present here a home built setup for measuring the specific resistivity, hall coefficient, and charge carrier concentration and mobility at elevated temperatures. The system is optimized for measurements of samples ranging between doped semiconductors and high resistivity metals and uses the van der Pauw method. The commercial availability of these systems is limited and they are usually not optimized for measurements on samples which show properties characteristic of thermoelectric materials. We give an assessment of the reliability of the measurements and a comparison with a commercial system, the Quantum Design, Physical Properties Measurement System (PPMS). Measurements on samples with different resistivity and charge carrier concentration will be shown, covering both ends of the interval of samples we are able to measure as well as the range normally observed for thermoelectrics. The comparison will be based on room temperature measurements.