Yu, Ping3; Langbein, Wolfgang Werner3; Leosson, Kristjan1; Hvam, Jørn Märcher1; Ledentsov, N. N.4; Bimberg, Dieter4; Ustinov, V. M.5; Egorov, A. Yu.5; Zhukov, A. E.5; Tsatsul'nikov, A. F.5; Musikhin, Yu. G.5
1 Department of Photonics Engineering, Technical University of Denmark2 Nanophotonics Theory and Signal Processing, Department of Photonics Engineering, Technical University of Denmark3 Department of Micro- and Nanotechnology, Technical University of Denmark4 Technische Universität Berlin5 Abraham F. Ioffe Institute
We have studied the polarization of surface and edge-emitted photoluminescence (PL) from structures with vertically coupled In0.5Ga0.5As/GaAs quantum dots (QD's) grown by molecular beam epitaxy. The PL polarization is found to be strongly dependent on the number of stacked layers. While single-layer and 3-layer structures show only a weak TE polarization, it is enhanced for 10-layer stacks. The 20-layer stacks additionally show a low-energy side-band of high TE polarization, which is attributed to laterally coupled QD's forming after the growth of many layers by lateral coalescence of QD's in the upper layers. While in the single, 3- and 10-layer stacks, both TE polarized PL components an stronger than the TM component, the  TE component is weaker than the TM component in the 20-layer stack. This polarization reversal is attributed to an increasing vertical coupling with increasing layer number due to increasing dot size.
Physical Review B (condensed Matter and Materials Physics), 1999, Vol 60, Issue 24, p. 16680-16685