1 Department of Micro- and Nanotechnology, Technical University of Denmark2 Department of Photonics Engineering, Technical University of Denmark3 unknown
We report on the binding energy and dephasing of localized biexciton states in narrow ZnSe multiple quantum wells. The measured binding-energy distribution of the localized biexcitons shows a width of 2.2 meV centered at 8.5 meV, and is fairly independent of the exciton localization energy. In four-wave mixing, the biexciton photon echo decays fast and nonexponentially. This behavior results from the inhomogeneous broadening of the biexciton binding energy, as we show by a comparison with an analytical model calculation. The fast decay is thus not related to a fast microscopic biexciton dephasing.
Physical Review B Condensed Matter, 1997, Vol 55, Issue 12
WELL STRUCTURES; INTERFACES; SEMICONDUCTOR QUANTUM DOTS; EXCITONS