1 Nanophotonics, Department of Photonics Engineering, Technical University of Denmark2 Department of Photonics Engineering, Technical University of Denmark3 Universität Würzburg4 Thales Research and Technology5 Technion-Israel Institute of Technology6 Politecnico di Torino7 Technion-Israel Institute of Technology8 Politecnico di Torino
Long wavelength lasers and semiconductor optical amplifiers based on InAs quantum wire/dot-like active regions were developed on InP substrates dedicated to cover the extended telecommunication wavelength range between 1.4 - 1.65 mm. In a brief overview different technological approaches will be discussed while in the main part the current status and recent results of quantum-dash lasers are reported. This includes topics like dash formation and material growth, device performance of lasers and optical amplifiers, static and dynamic properties as well as fundamental material and device modeling.
Journal of Physics D, 2005, Vol 38, Issue 13, p. 2088-2102