The influence of nitride thickness variations on the switching speed of MNOS memory transistors

Erik Bruun

doi:10.1109/T-ED.1978.19275

The influence of nitride thickness variations on the switching speed of MNOS memory transistors

Authors:

Bruun, Erik
Close
0000-0001-5085-7094
Department of Electrical Engineering, Technical University of Denmark

DOI:

10.1109/T-ED.1978.19275

Abstract:

The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.

Type:

Journal article

Language:

English

Published in:

I E E E Transactions on Electron Devices, 1978, Vol 25, Issue 11, p. 1328-1331

Keywords:

Main Research Area:

Science/technology

Publication Status:

Published

Review type:

Peer Review

Submission year:

1978

Scientific Level:

Scientific

ID:

2185768770

The influence of nitride thickness variations on the switching speed of MNOS memory transistors

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