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The influence of nitride thickness variations on the switching speed of MNOS memory transistors

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Authors:
  • Bruun, Erik
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    Orcid logo0000-0001-5085-7094
    Department of Electrical Engineering, Technical University of Denmark
DOI:
10.1109/T-ED.1978.19275
Abstract:
The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.
Type:
Journal article
Language:
English
Published in:
I E E E Transactions on Electron Devices, 1978, Vol 25, Issue 11, p. 1328-1331
Keywords:
Main Research Area:
Science/technology
Publication Status:
Published
Review type:
Peer Review
Submission year:
1978
Scientific Level:
Scientific
ID:
2185768770

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