- Authors:
- DOI:
- 10.1109/T-ED.1978.19275
- Abstract:
- The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.
- Type:
- Journal article
- Language:
- English
- Published in:
- I E E E Transactions on Electron Devices, 1978, Vol 25, Issue 11, p. 1328-1331
- Keywords:
- Main Research Area:
- Science/technology
- Publication Status:
- Published
- Review type:
- Peer Review
- Submission year:
- 1978
- Scientific Level:
- Scientific
- ID:
- 2185768770