1 Department of Electrical Engineering, Technical University of Denmark
The influence of nitride thickness variations on the switching speed of MNOS memory transistors is examined. The switching time constant is calculated as a function of the nitride thickness using a model of modified Fowler-Nordheim injection. The calculated characteristics compare well with measured characteristics and show a strong dependence on the nitride thickness.
I E E E Transactions on Electron Devices, 1978, Vol 25, Issue 11, p. 1328-1331