The influence of excitonic localization on the binding energy of biexcitons is investigated for quasi-three-dimensional and quasi-two-dimensional AlxGa1-xAs structures. An increase of the biexciton binding energy is observed for localization energies comparable to or larger than the free biexciton binding energy. A simple analytical model for localization in the weak confinement regime ascribes the increase to a quenching of the additional kinetic energy of the exciton-exciton motion in the biexciton.
Physical Review B, 1999, Vol 59, Issue 23, p. 15405-15408
GAAS QUANTUM-WELLS; DOTS; PHOTOLUMINESCENCE; EXCITONIC MOLECULE; NONLINEAR-OPTICAL-PROPERTIES; WIRES; ALXGA1-XAS; ENERGY