Hasmasan, Adrian Augustin1; Busca, Christian2; Teodorescu, Remus3; Helle, Lars2
1 Department of Energy Technology, The Faculty of Engineering and Science, Aalborg University, VBN2 The Faculty of Engineering and Science, Aalborg University, VBN3 Power Electronic Systems, The Faculty of Engineering and Science, Aalborg University, VBN
In this paper, a FEM (finite element method) based mechanical model for PP (press-pack) IGBTs (insulated gate bipolar transistors) is presented, which can be used to calculate the clamping force distribution among chips under various clamping conditions. The clamping force is an important parameter for the chip, because it influences contact electrical resistance, contact thermal resistance and power cycling capability. Ideally, the clamping force should be equally distributed among chips, in order to maximize the reliability of the PP IGBT. The model is built around a hypothetical PP IGBT with 9 chips, and it has numerous simplifications in order to reduce the simulation time as much as possible. The developed model is used to analyze the clamping force distribution among chips, in various study cases, where uniform and non-uniform clamping pressures are applied on the studied PP IGBT.
Proceedings of the 3rd Ieee International Symposium on Power Electronics for Distributed Generation Systems (pedg), 2012, 2012, p. 788-793
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3rd International Symposium on Power Electronics for Distributed Generation Systems, 2012